A large modern computer can contain nearly half a million switching elements and 10 million high-speed memory elements. They ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

This is read by an automated voice. Please report any issues or inconsistencies here. Scientists have found that memories are not static records but dynamic processes that change the brain’s wiring ...

Researchers have demonstrated that the layered multiferroic material nickel iodide (NiI2) may be the best candidate yet for devices such as magnetic computer memory that are extremely fast and compact ...

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

Your memory relies on reusing, overlapping and adapting rather than on a fixed number of storage spots. When you purchase through links on our site, we may earn an affiliate commission. Here’s how it ...

Backed by peer-reviewed studies and more than 16 years of research, the device applies scent-based stimulation to enhance cognitive performance and memory function In a 2023 randomized controlled ...

Researchers have developed a new type of memory cell that can both store information and do high-speed, high-efficiency calculations. The memory cell enables users to run high-speed computations ...

The human brain’s ability to store and recall information remains one of science’s most intriguing areas of study. From remembering where we placed our keys to preserving precious moments with loved ...

If schools want to prepare young people for a future shaped by technology, they must act now to ensure that computer science is not a privilege for a few but a foundation for all. The time to begin is ...