Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are sweep circuits, radar pulse modulators, capacitor discharge ...

Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By replacing silicon with a magnetic semiconductor, the team created a ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 60 W, ...