Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their ...

The transition to the 2nm technology node introduces unprecedented challenges in Automated Test Equipment (ATE) bring-up and manufacturability. As semiconductor devices scale down, the complexity of ...

Downscaling of electronic devices, such as transistors, has reached a plateau, posing challenges for semiconductor fabrication. However, a research team led by materials scientists recently discovered ...