A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

CHANDLER, Ariz., Feb. 20, 2024 (GLOBE NEWSWIRE) -- The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like ...

The VLA502-01 is a hybrid integrated circuit (Figure 1) intended as a gate driver for high power IGBT modules. This circuit has been optimized for use with Powerex NFH-Series IGBT modules. However, ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices ...

For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...

Infineon has introduced 2.3kV isolated gate drivers for IGBTs and mosfets with on-the-fly switchable dual slew-rates. Branded ‘2L-SRC Compact’ and numbered ‘1ED32xx’, 10 and 18A versions are available ...

BEVERLY, Mass.--(BUSINESS WIRE)--IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ:IXYS), today announced that the IXD_614SI family has been added to ...