Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density ...

LONDON – Tower Semiconductor Ltd., a foundry which trades as TowerJazz, has announced that it has integrated a thermally assisted switching (TAS) magnetic random access memory (MRAM) into its 130-nm ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such ...

SANTA CLARA, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today introduced a scalable, embedded magnetoresistive non-volatile memory technology (eMRAM) on its 22FDX platform, providing system designers ...

Advanced non-volatile memory technologies form one of those topics like religion, politics, and child-raising: best not discussed at family get-togethers. Each of the various technologies—phase-change ...

Taiwan-based semiconductor foundry house United Microelectronics Corporation (UMC) and Avalanche Technology, a developer of the next generation STT-MRAM (spin transfer torque magnetic RAM), have ...

Memory plays a key role in both training and implementation of artificial intelligence solutions, such as machine learning. It is also a requirement for the creation of advanced network technologies, ...

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...

HSINCHU, Taiwan & FREMONT, Calif.--(BUSINESS WIRE)--United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) ("UMC"), a leading global semiconductor foundry, and Avalanche Technology, Inc., the ...